IMAGE SENSOR CAPABLE OF PREVENTING CROSSTALK DUE TO A MICRO LENS AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An image sensor and a manufacturing method thereof are provided to improve a bridge and merge phenomenon of a micro lens by reducing the thickness of a micro lens on the uppermost side of a photo diode.;CONSTITUTION: An etching stop pattern(51) comprises a first inner lens formed on the semiconductor substrate in order to correspond to a photo diode. A wiring layer is formed on the semiconductor substrate including the first inner lens. A protection layer pattern includes a second inner lens formed on the wiring layer to correspond to the first inner lens. A first planarization layer(110) is formed on the second inner lens. A color filter is formed on a first planarization layer to correspond to the photo diode. A second planarization layer is formed on the color filter. A micro lens(140) is formed on the second planarization layer.;COPYRIGHT KIPO 2010