CONTROL OF THE RELATIVE HEIGHT OF A CIRCUITRY AND A MEMORY ARRAY IN A PHASE CHANGE MEMORY FRONT-END-OF-LINE PROCESS FLOW, CAPABLE OF OVERCOMING THE HEIGHT DEVIATION OF A COMPLEMENTARY METAL SEMICONDUCTOR GATE AND AN ARRAY SELECTOR

摘要

PURPOSE: A control of the relative height of a circuitry and a memory array is provided to improve the manufacturing compatibility of a phase change memory process using a complementary metal semiconductor process which embeds storing devices.;CONSTITUTION: An array part(212) forms bipolar junction transistors by combining with phase change materials. A circuit part(210) includes a complementary metal semiconductor combining logic devices. The array part is covered with an oxide and a protective layer(214). The circuit part is recessed. The circuit part includes a gate oxide and a polysilicon gate.;COPYRIGHT KIPO 2010