PLASMA PROCESSING METHOD WHICH IN ADVANCE PRODUCES THE CONSUMPTION OF THE FOCUS RING amp;lsqb;FOCUS RINGamp;rsqb; FROM THE PLASMA PROCESS TIME

摘要

PURPOSE: The plasma processing method controls the predetermined high-frequence bias electricity and impedance regulation circuit. Change is not given to the etching property of wafer.;CONSTITUTION: The shower plate(2) locates within the vacuum container(1). The upper electrode(3) and bottom electrode(4) locate within the vacuum container. In the upper electrode, the high frequency power for plasma-generating is provided from the radio frequency power(5). In the bottom electrode, the high-frequency bias electricity is provided from the high-frequency bias power source(6).;COPYRIGHT KIPO 2010