DOUBLE-SIDED SILICON STRIP SENSOR FOR DETECTING RADIATION AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A both sided silicon strip sensor for detecting radiation and a manufacturing method thereof are provided to improve sensing performance by using the thickness of the substrate with a PIN diode structure as a sensing region. CONSTITUTION: A plurality of P-type strips(20) is formed on the upper side of an N type semiconductor substrate(10) in a band shape. A plurality of N-type strips(30a,30b) is formed on the lower side of the N type semiconductor substrate in a band shape orthogonal to the plurality of P type strips. A first dielectric layer(22) and a second dielectric layer(32) are formed on the upper side and the lower side of the N type semiconductor substrate. A third dielectric layer(24) and a second fourth dielectric layer(34) are formed on the lower side of the second dielectric layer and the upper side of the first dielectric layer. First and second metal units(25a,35a) detects the charge signal of the corresponding P and N type strips.