MEMORY DEVICE FOR SELECTING AND OFFERING THE REFERENCE SIGNAL AND MOBILE DEVICE INCLUDING THE SAME THE REFERENCE BIT LINE HAVING THE RESISTANCE DISTRIBUTION ACCORDING TO THE PATTERNING PROCESS OF BEING SIMILAR

摘要

PURPOSE: The memory device and mobile device including the same can prevent the degradation of the sensing margin due to the resistance mismatch by including a plurality of reference bit lines with memory bit lines of the plurality having resistance distributions according to the different patterning step of the double patterning process.;CONSTITUTION: A plurality of memory bit lines(1110) is connected to a plurality of memory cells. A plurality of memory bit lines has the resistance distributions according to the different patterning step of the double patterning process. A plurality of reference bit lines(1210) is connected to a plurality of reference cells. A plurality of reference bit lines has the resistance distributions according to the different patterning step. The reference bit line having the resistance distribution according to the patterning process where the reference bit line selection part(1220) is similar of the memory bit line connected to part of the memory cell which is stuck out is selected and the reference signal is offered.;COPYRIGHT KIPO 2011