首页> 外国专利> METHOD FOR MANUFACTURING MONO-CRYSTAL SUBSTRATES, A METHOD FOR EVALUATING THE MONO-CRYSTAL SUBSTRATES, AND THE MONO-CRYSTAL SUBSTRATES, CAPABLE OF FORMING HIGH BULK-MICRO-DEFECT DENSITY IN A SURFACE PROXIMAL REGION

METHOD FOR MANUFACTURING MONO-CRYSTAL SUBSTRATES, A METHOD FOR EVALUATING THE MONO-CRYSTAL SUBSTRATES, AND THE MONO-CRYSTAL SUBSTRATES, CAPABLE OF FORMING HIGH BULK-MICRO-DEFECT DENSITY IN A SURFACE PROXIMAL REGION

机译:制造单晶基体的方法,评估单晶基体的方法和单晶基体,可以在表面近端区域形成高块状微缺陷密度

摘要

PURPOSE: A method for manufacturing mono-crystal substrates, a method for evaluating the mono-crystal substrates, and the mono-crystal substrates are provided to improve the bulk micro defect density in a surface proximal region by performing an additional oxygen precipitate growing process.;CONSTITUTION: A mono-crystal ingot is grown(S10). A mono-crystal substrate is processed using the mono-crystal ingot(S20). The mono-crystal substrate undergoes a rapid thermal process(S30). The rapid thermal process includes a first rapid thermal processing step and a second rapid thermal processing step. A bulk-micro-defect inspection is performed(S40).;COPYRIGHT KIPO 2011
机译:目的:提供一种用于制造单晶衬底的方法,一种用于评估单晶衬底的方法以及单晶衬底,以通过执行额外的氧沉淀物生长工艺来改善表面近端区域中的体微缺陷密度。 ;组成:生长单晶锭(S10)。使用单晶锭加工单晶衬底(S20)。单晶衬底经历快速热处理(S30)。快速热处理包括第一快速热处理步骤和第二快速热处理步骤。进行了大块微缺陷检查(S40)。; COPYRIGHT KIPO 2011

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