首页> 外国专利> A HIGH PURITY FUSED QUARTZ MELTING CRUCIBLE ASSEMBLY FOR MANUFACTURING A POLYCRYSTALLINE SILICON INGOT AND THE MANUFACTURING METHOD THEREOF

A HIGH PURITY FUSED QUARTZ MELTING CRUCIBLE ASSEMBLY FOR MANUFACTURING A POLYCRYSTALLINE SILICON INGOT AND THE MANUFACTURING METHOD THEREOF

机译:用于制造多晶硅硅锭的高纯度熔融石英熔融坩埚组件及其制造方法

摘要

PURPOSE: A poly-crystal silicon ingot manufacturing high purity vitreous silica crucible assembly and a manufacturing method thereof are provided to improve the productivity by producing an ingot after minimizing the inflow of impurities during growing the crystal. CONSTITUTION: A high purity quartz glass board with 99.99~99.999% is cut and ground. An impurity of the high purity quartz glass board surface is washed with a cleaning process. A fine crack and a concavo-convex of the high purity quartz glass board are removed with a fire polishing process. The processed high purity quartz glass board is fixed by using a graphite jig. The high purity quartz glass board fixed with the graphite jig is welded by a seamless welding. An annealing process for the welded high purity quartz glass board is executed.
机译:目的:提供一种制造高纯度玻璃态二氧化硅坩埚组件的多晶硅锭及其制造方法,以通过在使晶体生长过程中的杂质流入最小化之后生产锭来提高生产率。组成:一块99.99〜99.999%的高纯度石英玻璃板被切割和研磨。通过清洗工艺清洗高纯度石英玻璃板表面的杂质。通过火焰抛光工艺去除高纯度石英玻璃板的细小裂纹和凹凸。使用石墨夹具将加工后的高纯度石英玻璃板固定。固定有石墨夹具的高纯度石英玻璃板通过无缝焊接进行焊接。对焊接的高纯度石英玻璃板执行退火工艺。

著录项

  • 公开/公告号KR100957444B1

    专利类型

  • 公开/公告日2010-05-11

    原文格式PDF

  • 申请/专利权人 JUNG SUNG MUK;

    申请/专利号KR20090111297

  • 发明设计人 JUNG SUNG MUK;

    申请日2009-11-18

  • 分类号C30B15/10;C03B29;

  • 国家 KR

  • 入库时间 2022-08-21 18:31:16

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