A process for the preparation of a spacing element for a conduction element by applying an etch stop layer, which, by means of a strongly directional deposition technique is applied and transistor with a spacer element

摘要

A method with:Forming a pipe element having an upper surface and a first side wall and a second side wall by means of a semiconductor layer;a directional depositing an etch stop layer via the pipe element and the semiconductor layer, about the upper surface and the semiconductor layer with a desired thickness, while a region with reduced thickness of the etch stop layer on the first and the second side wall is formed, depositing a spacer layer by means of the etch stop layer; andanisotropic etching of the spacer layer, in order to form a spacer element, whereby the on the upper surface of the pipe element and of the semiconductor layer formed on the other side of the etch stop layer for the control of the anisotropic etching is used.