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TERAHERTZ WAVE EMITTING ELEMENT AND TERAHERTZ WAVE EMITTING DEVICE USING THE SAME

机译:使用相同的TERAHERTZ波发射元件和TERAHERTZ波发射装置

摘要

PROBLEM TO BE SOLVED: To provide a terahertz wave emitting element which has a simple structure, is extremely small, can operate at room temperature, generates a pulse wave and a continuous wave of a terahertz wave (THz wave), and can perform of laser oscillation, and to provide a terahertz wave emitting device using the same.;SOLUTION: The terahertz wave emitting element is characterized in that it includes an optical excitation light source, the optical energy of the light source is larger than or equal to the band gap energy of a semiconductor chip for emitting a terahertz wave, the semiconductor chip has a shallow impurity level of an activation energy EA and is formed of a material having the adjusted Fermi energy Ef so that the terahertz wave can be emitted at room temperature, and the terahertz wave is formed in such a way that photoluminescent light emitted when carriers optically excited based on band-to-band transition between the semiconductor chips are recombined with a conductive band or a valence electron band of the semiconductor chip through the shallow impurity level including the excited level may be the terahertz wave. Furthermore, a resonator is provided in the semiconductor chip so as to execute the laser oscillation of the terahertz wave.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种太赫兹波发射元件,其结构简单,非常小,可以在室温下工作,产生太赫兹波(THz波)的脉冲波和连续波,并且可以执行激光太赫兹波发射元件的特征在于它包括一个光激发光源,该光源的光能大于或等于带隙用于发射太赫兹波的半导体芯片的能量,该半导体芯片具有较低的激活能EA的杂质能级,并且由具有调整后的费米能Ef的材料形成,从而可以在室温下发射太赫兹波,并且太赫兹波的形成方式是,当基于半导体芯片之间的带间跃迁而对载流子进行光学激发的载流子重新结合时,会发出光致发光。通过包括激发能级的浅杂质能级的半导体芯片的能带或价电子能带可以是太赫兹波。此外,在半导体芯片中提供了一个谐振器,以执行太赫兹波的激光振荡。;版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2011155024A

    专利类型

  • 公开/公告日2011-08-11

    原文格式PDF

  • 申请/专利权人 KIMURA MITSUTERU;TERAHERTZ LABORATORY CO;

    申请/专利号JP20080102962

  • 发明设计人 KIMURA MITSUTERU;

    申请日2008-04-10

  • 分类号H01S1/02;

  • 国家 JP

  • 入库时间 2022-08-21 18:25:36

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