METHOD FOR DEPOSITING THREE-TIMES SYMMETRY MgO FILM AND FOUR-TIMES SYMMETRY MgO FILM, AND OXIDE SUPERCONDUCTING CONDUCTOR

摘要

PPROBLEM TO BE SOLVED: To provide a film deposition method capable of selectively depositing a four-times symmetry MgO film and a three-times symmetry MgO film by the ion beam assist sputtering method, and to provide an oxide superconducting conductor using the four-times symmetry MgO film and an oxide superconducting conductor using the three-times symmetry MgO film. PSOLUTION: In the method for depositing a MgO film on a base metal by the ion beam assist sputtering method, a four-times symmetry MgO film can be deposited by executing the film deposition with the back pressure of 0.001 Pa, and a three-times symmetry MgO film can be deposited by executing the film deposition with the back pressure of 0.001 Pa. PCOPYRIGHT: (C)2011,JPO&INPIT