首页> 外国专利> COLUMNAR STRUCTURE FILM, METHOD OF FORMING THE SAME, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE DEVICE, AND PIEZOELECTRIC TYPE ULTRASONIC VIBRATOR

COLUMNAR STRUCTURE FILM, METHOD OF FORMING THE SAME, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE DEVICE, AND PIEZOELECTRIC TYPE ULTRASONIC VIBRATOR

机译:柱状结构膜,其形成方法,压电元件,液体放电装置和压电型超声振动器

摘要

PROBLEM TO BE SOLVED: To provide a columnar structure film such as a piezoelectric film, excellent in withstand voltage and driving durability, formed without requiring a complicated process.;SOLUTION: The columnar structure film is formed on a substrate and includes a number of columnar bodies extending in a non-parallel direction with respect to the surface of the substrate. The film is formed by a vapor growth method and satisfies an expression: GSmax2.0 GSmin where GSmax represents a maximum value of an average column diameter in the horizontal direction as viewed in the film thickness direction and GSmin represents a minimum value thereof. In a film structure where GSmax/GSmin is a large value, the probability of penetrating through a grain boundary in the film thickness direction from the lower surface to the upper surface of the film is decreased and leak paths are reduced, which makes it possible to improve withstand voltage and driving durability.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种不需要复杂工艺即可形成的耐压性和驱动耐久性优异的诸如压电膜的柱状结构膜。解决方案:该柱状结构膜形成在基板上并且包括多个柱状膜。主体相对于基板表面沿非平行方向延伸。该膜通过气相生长法形成,并且满足以下表达式:GSmax> 2.0GSmin其中,GSmax代表从膜厚度方向观察的水平方向上的平均柱直径的最大值,并且GSmin代表其最小值。在GSmax / GSmin为大值的膜结构中,从膜的下表面到上表面贯穿膜厚方向的晶界的可能性降低,泄漏路径减少,因此,改善耐压性和驱动耐久性。;版权所有:(C)2011,日本特许厅

著录项

  • 公开/公告号JP2011040644A

    专利类型

  • 公开/公告日2011-02-24

    原文格式PDF

  • 申请/专利权人 FUJIFILM CORP;

    申请/专利号JP20090188098

  • 申请日2009-08-14

  • 分类号H01L41/24;H01L41/18;H01L41/09;H01L41/22;C23C14/08;B41J2/16;

  • 国家 JP

  • 入库时间 2022-08-21 18:23:36

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号