Read-out and verification of word line standard level in order to pursue source level

摘要

The non-volatile storage, in parallel, has the individual page of the memory cell which it should perceive. As for this storage unit, with the specified word line voltage from word line voltage source and in order the voltage level in the gathering source node of the page of one or more to receive, as it is connected, during perception operating in order to offer output voltage to the word line of memory, as the source level pursuit circuit which is connected is included, this source level pursuit circuit includes the operational amplifier, as for output voltage, pursues the voltage level in the gathering node, just the quantity in order to compensate the source bias error which originates in the limited resistance in the ground loop is the word line voltage which the offset is done.