To the electronic device and its production mannered null luminous principal plane and the aforementioned luminous principal plane which assist

摘要

The semiconductor device die/di (10 and 116), the heat sink support structure (30 and 100) is arranged on. The nano- tube (54 and 126) the nano- tube territory which is included (52 and 120), the heat sink support structure (30 and is provided 100) on the surface or inside that. The nano- tube territory (52 and 120), in order the semiconductor device die/di (10 and 116) from the heat sink support structure (30 and 100) to contribute to thermal transport, it is provided. According to one execution form, the semiconductor device die/di (10) the die/di electrode (20 and 22) it includes, the support structure (30), by the nano- tube territory (52) at least several, is decided the contact pad which (40 and 42) it includes. The contact pad (40 and 42), the die/di electrode (20 and 22) it contacts electrically and mechanically. Regarding another execution form, the heat sink support structure (100), the said support structure (100) the micro channel which inside is provided in cross direction (120) it includes. The nano- tube territory several micro channel (120) is arranged at least inside.