PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which includes a surface treatment capable of effectively removing a working residue on an aluminum film surface without producing corrosion.;SOLUTION: The manufacturing method of a semiconductor device includes a surface treatment which exposes an aluminum film (13) formed on a semiconductor substrate and removes a working residue remained on the surface of the exposed aluminum film (131), wherein the surface treatment treats the exposed aluminum film (13) with a chemical containing an anion and then treats it with alkaline chemical.;COPYRIGHT: (C)2007,JPO&INPIT
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