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Using the sputtering target and the said target for phase change type optical disk protecting film formation, being the optical recording medium null zinc sulfide which formed the phase change type
Using the sputtering target and the said target for phase change type optical disk protecting film formation, being the optical recording medium null zinc sulfide which formed the phase change type
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机译:将溅射靶和上述靶用于相变型光盘保护膜的形成是形成相变型的光记录介质无效硫化锌。
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摘要
PROBLEM TO BE SOLVED: To obtain a sputtering target composed of a composite of a chalcogenide and silicate advantageous for forming a protective film of phase change type optical disk with which production efficiency can be enhanced by suppressing the occurrence of nodules and enhancing the uniformity of deposition, and to provide an optical recording medium with the protective film of phase change type optical disk formed thereon by the target.;SOLUTION: The sputtering target for forming a protective film of phase change type optical disk composed of the composite of the chalcogenide and the silicate has a structure attaining 0.3≤A/B≤0.95 when the average length in the normal direction of the silicate existing on the surface located within the range from -30° to +30° with respect to the normal direction of the sputtering surface in at least the part of erosion is defined as A and the average length in the direction perpendicular to the normal as B.;COPYRIGHT: (C)2010,JPO&INPIT
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