The hole formation process which forms the hole of the depth which does not penetrate completely the aforementioned insulating

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor film for improving the characteristics of elements such as a thin film transistor at the time of forming a semiconductor film by carrying out melting and crystallization using micropores.;SOLUTION: This method for manufacturing a semiconductor film comprises a micropore formation process for forming a micropore (14) in an insulating film (12) formed on a substrate (10); a first film formation process for forming a non-single crystal semiconductor film (16) in the micropore and on the insulating film; a melting and crystallizing process for melting and crystallizing the non-single crystal semiconductor film, and for forming a first crystal semiconductor film (18) with the micropore as almost a center; and a second film formation process for forming a second crystal semiconductor film (20) by epitaxially growing the semiconductor on the first crystal semiconductor film.;COPYRIGHT: (C)2005,JPO&NCIPI