PROBLEM TO BE SOLVED: To provide the plasma processing equipment and processing method that reduces impurities via reactor vessels, maintaining plasma stability.;SOLUTION: In the plasma processing equipment, 90% of the side wall of the inner wall 101 in the reaction chamber 1 is covered with a dielectric substance 102, and a grounded conductive material 21a with an area size smaller than or equal to 10% of the side wall of the inner wall 101 is provided in a way that direct current flows via the plasma. A DC earth made up of a conductive material 21 is grounded at a location where the floating potential of plasma (or plasma density) is higher than that (or plasma density) of plasma 9 near a wafer holding electrode 14 with a relatively large degree of wall reduction.;COPYRIGHT: (C)2005,JPO&NCIPI
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