The crystal formation accumulation device and the crystal formation accumulation mannered

摘要

On a crystal substrate, the present invention is crystalline in particular at least one reaction chamber with (3) bed is heated on the other side vertically for placing ceiling (2) the substrate (4) (1) to an apparatus for depositing a layer. Gas inlet member forming gas inlet zone superimposed vertically (6,7) (5), is introduced by separating the second gaseous starting material 1 and the first one at least, the starting material, It flows horizontally through said reaction chamber (1) with carrier gas. The homogenized inlet region immediately adjacent to (5) the gas inlet member (EZ), wherein the starting material is degraded at least partially, the growth area adjacent the inlet area to (EZ) flow of the gas, (GZ) of to generate decomposition products to be deposited on the substrate (4) on the flow of the gas is exhausted continuously. In order to reduce the spread in the horizontal direction of the inlet zone (EZ), additional gas inlet zone gas inlet member (5) (8) is required in one of the two starting materials.