Mask pattern creation manner, layout creation manner and production manner of photo mask, from midst of the design data of the semiconductor equipment which

摘要

PPROBLEM TO BE SOLVED: To prevent pattern collapse of a line end portion or a defect pattern as a whole and to improve the process margin in lithography and the manufacturing yield of a device. PSOLUTION: The method for making a mask pattern comprises: recognizing a dummy pattern 51 which does not effect on device operation among design data of a semiconductor device corresponding to a pattern to be formed in a mask, extracting an end portion of the line or space constituting the recognized dummy pattern 51; and newly arranging a common dummy pattern 52 to connect the extracted end portion and a dummy pattern 51 adjacent to the end portion. PCOPYRIGHT: (C)2006,JPO&NCIPI