Capacitively coupled plasma reactor uniformly distributed in the radial direction of the plasma

摘要

A workpiece support cathode within the chamber having a working surface facing the overhead ceiling and side walls defining a chamber, the ceiling for supporting a semiconductor workpiece, the plasma reactor for processing a semiconductor wafer, a process gas It includes a process gas inlet for introducing into the chamber, and an RF bias power generator having a bias power frequency. The work surface, there is a bias power feed point, between the bias power feed point at the working surface and the RF bias power generator, RF conductor is connected. Dielectric sleeve surrounds a portion of the RF conductor, the length in the axial direction along the RF conductor, a dielectric constant along the RF conductor and the axial position, the sleeve, the uniformity of plasma ion density across the work surface The length of the sleeve such that the sleeve provides a reactance that enhances, dielectric constant, and I and a position. According to a further aspect, it is possible to include an RF coupling annular ring having an inner diameter corresponding to the circumference of the workpiece, the RF coupling ring, the reactor, a sufficient portion of the distance between the overhead electrode and the work surface for an extended, to increase the plasma ion density near the periphery of the workpiece.