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The field-effect transistor which has with two output terminals which consist of the control mannered null gate terminal and the source terminal and the drain

机译:具有两个输出端子的场效应晶体管,该两个输出端子由控制方式的空栅极端子以及源极端子和漏极组成

摘要

PROBLEM TO BE SOLVED: To achieve a sensor which is capable of keeping a gate current ig stable and its stability high, even if a temperature change or a current variation occurs in an oscillating proximity sensor which is equipped with an oscillation circuit that is provided with field effect transistors as oscillation elements and detects an external change corresponding to a change, in a current which flows through a feedback path that feeds back a gate current to the gate terminal while a source terminal or a drain terminal is connected to the gate terminal.;SOLUTION: The oscillating sensor 1 is configured so as to be equipped with a voltage control unit 20 that keeps the DC component ig of the gate current which flows through a feedback path 8, at a prescribed value by changing a voltage applied between the source terminal S and the drain terminal D.;COPYRIGHT: (C)2007,JPO&INPIT
机译:要解决的问题:实现一种传感器,即使在配备有振荡电路的振荡式接近传感器中发生温度变化或电流变化时,也能够保持栅极电流ig稳定并且其稳定性高。场效应晶体管作为振荡元件,并在流经反馈路径的电流中检测与变化相对应的外部变化,该电流将栅极电流反馈到栅极端子,同时将源极端子或漏极端子连接到栅极端子。 ;解决方案:振荡传感器1配置为配备电压控制单元20,该电压控制单元20通过改变施加在电源之间的电压将流经反馈路径8的栅极电流的直流分量ig保持在规定值。端子S和漏极端子D .;版权所有(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP4698441B2

    专利类型

  • 公开/公告日2011-06-08

    原文格式PDF

  • 申请/专利权人 富士通株式会社;

    申请/专利号JP20060053120

  • 发明设计人 本郷 廣信;

    申请日2006-02-28

  • 分类号H03K17/95;

  • 国家 JP

  • 入库时间 2022-08-21 18:17:15

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