Internal defect measurement method of a semiconductor wafer, internal defect measurement device manufacturing method and semiconductor wafer of semiconductor wafer

摘要

PROBLEM TO BE SOLVED: To provide a measuring method for the internal defect of a semiconductor wafer in which chemicals such as a weak acid or the like are not required, and in which the internal defect can be measured with high sensitivity even in the semiconductor wafer of low reistivity.;SOLUTION: A measuring cross section IP which exposes the inside of the semiconductor wafer 1 is formed in the semiconductor wafer 1. A light beam LB for defect detection is made incident on the measuring cross section IP. Response light DB from the cross section IP based on the beam LB is detected. On the basis of information on the response light DB, a defect which exists inside the semiconductor wafer 1 is measured.;COPYRIGHT: (C)2002,JPO