Photoresist pattern forming method and immersion upper layer film and immersion upper layer film-forming composition

摘要

The object of the present invention, the immersion upper layer film and the immersion upper layer film forming composition capable of forming an upper layer film can be effectively suppressed defects of the liquid immersion lithography from the dissolution residue and defects watermark defects and it is to provide a resist pattern forming method. It is intended to include a solvent and a resin component, a resin component, forming an upper layer film composition of the present invention, at least one of repeating units represented by formulas (1-1) to (1-3) wherein and I include the resin (A) containing, at least one of repeating units represented by (2-1) and (2-2) below. [Wherein, R ¹ represents a hydrogen atom or a methyl group, branched alkylene group, or R ² and R ³ alicyclic 4 to 12 carbon atoms or straight-chain methylene group having a carbon number of 2 to 6 and represents an alkylene group, R ⁴ represents a hydrogen atom or a methyl group, a single bond, a methylene group, or R ⁵ represents an alkylene group of straight or branched C 2 to 6 carbon atoms. ]