OPTICAL SEMICONDUCTOR DEVICE HAVING UNEVEN SEMICONDUCTOR LAYER WITH NON-UNIFORM CARRIER DENSITY

摘要

In an optical semiconductor device including a first semiconductor layer of a first conductivity type, an active layer provided on the first semiconductor layer, a second semiconductor layer of a second conductivity type provided on the active layer, an insulating layer provided on a part of the second semiconductor layer, an uneven semiconductor layer of the second conductivity type provided on another part of the second semiconductor layer, and an electrode layer provided on the insulating layer and the uneven semiconductor layer, a density of carriers of the second conductivity type being larger at a tip portion of the uneven semiconductor layer than at a bottom portion of the uneven semiconductor layer.