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Method and System for Implementing High-Speed Interfaces Between Semiconductor Dies in Optical Communication Systems

机译:在光通信系统中实现半导体管芯之间的高速接口的方法和系统

摘要

A method and system for implementing high-speed electrical interfaces between semiconductor dies in optical communication systems are disclosed and may include communicating electrical signals between an electronics die and an optoelectronics die via coupling pads which may be located in low impedance points in Tx and Rx paths. The electrical signals may be communicated via one or more current-mode, controlled impedance, and/or capacitively-coupled interfaces. The current-mode interface may include a cascode amplifier stage split between source and drain terminals of transistors on the dies. The controlled-impedance interfaces may include transmission line drivers on a first die and transmission lines on a second die. The capacitively-coupled interfaces may include capacitors formed by contact pads on the dies. The coupling pads may be connected via one or more of: wire bonds, metal pillars, solder balls, or conductive resin. The dies may comprise CMOS and may be coupled in a flip-chip configuration.
机译:公开了一种用于在光通信系统中实现半导体管芯之间的高速电接口的方法和系统,该方法和系统可以包括经由耦合垫在电子管芯和光电管芯之间传递电信号,该耦合垫可以位于Tx和Rx路径中的低阻抗点中。 。可以经由一个或多个电流模式,受控阻抗和/或电容耦合接口来传递电信号。电流模式接口可以包括在裸片上的晶体管的源极和漏极端子之间划分的共源共栅放大器级。受控阻抗接口可以包括在第一裸片上的传输线驱动器和在第二裸片上的传输线。电容耦合接口可以包括由管芯上的接触垫形成的电容器。耦合垫可以通过以下一种或多种方式连接:引线键合,金属柱,焊球或导电树脂。所述管芯可以包括CMOS并且可以以倒装芯片配置耦合。

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