首页> 外国专利> CRYSTAL GROWING SYSTEM HAVING MULTIPLE ROTATABLE CRUCIBLES AND USING A TEMPERATURE GRADIENT METHOD

CRYSTAL GROWING SYSTEM HAVING MULTIPLE ROTATABLE CRUCIBLES AND USING A TEMPERATURE GRADIENT METHOD

机译:具有多个可旋转坩埚并使用温度梯度法的晶体生长系统

摘要

A crystal growing system having multiple rotatable crucibles and using a temperature gradient method comprises a crystal furnace, a plurality of crucibles, a supporting device, and a temperature control device. The crystal furnace includes a furnace body, a heater, and a hearth, wherein the furnace body from outer to inner includes an outer shell, a fiber insulation layer, an insulation brick layer, and a refractory layer. The crucible supporting device includes an elevator, a plurality of crucible guiding tubes, and a plurality of tube holders each capable of supporting a crucible guiding tube, a moving device that is connected to the elevator, a motor with electrical power that is connected to the moving device, wherein there is an affixing device between each pair of guiding tube and guiding tube holder. Each crucible is located in a corresponding crucible guiding tube. The crucible supporting device is a rotatable device. The refractory layer is ⅔-⅚ of the total height of the hearth, and the heater, is located at ¼-½ of the height of the hearth. The present invention promotes doping of crystal and makes doping more uniform.
机译:具有多个可旋转坩埚并使用温度梯度法的晶体生长系统包括晶体炉,多个坩埚,支撑装置和温度控制装置。晶体炉包括炉体,加热器和炉床,其中炉体从外到内包括外壳,纤维绝缘层,绝缘砖层和耐火层。坩埚支撑装置包括升降机,多个坩埚导管和多个分别能够支撑坩埚导管的管保持器,与升降机连接的移动装置,与电动机连接的带电马达。移动装置,其中在每对导管和导管支架之间都有一个固定装置。每个坩埚位于相应的坩埚导管中。坩埚支撑装置是可旋转的装置。耐火层是炉床总高度的1 / 3-,加热器位于炉床高度的1 /4-½。本发明促进晶体的掺杂并使掺杂更均匀。

著录项

  • 公开/公告号US2010294198A1

    专利类型

  • 公开/公告日2010-11-25

    原文格式PDF

  • 申请/专利权人 YOUBAO WAN;

    申请/专利号US20070448683

  • 发明设计人 YOUBAO WAN;

    申请日2007-12-27

  • 分类号C30B11/00;

  • 国家 US

  • 入库时间 2022-08-21 18:13:39

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