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CMP TECHNIQUES FOR OVERLAPPING LAYER REMOVAL
CMP TECHNIQUES FOR OVERLAPPING LAYER REMOVAL
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机译:去除重叠层的CMP技术
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摘要
Chemical-Mechanical Polishing can be used to planarize a semiconductor wafer having a patterned overlapping layer. Isotropic etching can remove a portion of the patterned overlapping layer to produce tapered sidewalls of reduced height. A portion of the overlapping layer can be removed using CMP. The overlapping layer can have a higher polishing rate than the underlying layer so that the underlying layer remains substantially intact after removing the overlying layer.
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