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MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF-ALIGNED AIR GAPS FORMED BASED ON A SACRIFICIAL MATERIAL
MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF-ALIGNED AIR GAPS FORMED BASED ON A SACRIFICIAL MATERIAL
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机译:基于特殊材料的包括自成形气隙的金属化结构的微结构设备
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摘要
In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such as a carbon material, which is deposited after the patterning of a dielectric material for forming therein a via opening. Consequently, superior process conditions during the patterning of the via opening and the sacrificial material in combination with a high degree of flexibility in selecting appropriate materials for the dielectric layer and the sacrificial layer may provide superior uniformity and device characteristics.
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