VERTICAL STRUCTURE LED CURRENT SPREADING BY IMPLANTED REGIONS

摘要

An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In some embodiments, the non-conductive regions are located in the p-type layer. In other embodiments, the non-conductive layer may be in the multi-quantum well or n-type layer.