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METHOD OF DETERMINING THE LUBRICATION MECHANISM IN CMP

机译:确定CMP中润滑机理的方法

摘要

The present invention is a method for obtaining data easily, accurately and effectively that may be used in determination of Sommerfeld Numbers and COF for CMP polishing. Using the Sommerfeld Numbers and COF values thus obtained the lubrication mechanism of CMP polishing with particular materials and under particular conditions can easily and reliably be studied. The method of the present invention is accomplished by use of CMP polishing tools capable of simultaneously measuring shear force and normal force, and rendering a value for the COF while simultaneously enabling the operator to change pressure on and relative velocity of the CMP wafer and CMP polishing pad in real time. Using the said CMP tool, the pressure and relative velocity may be varied separately or together for the desired length of time according to the needs of the operator so that within one CMP process multiple measurements may be taken under the same process conditions.
机译:本发明是一种容易,准确和有效地获得数据的方法,该方法可用于确定CMP抛光的索姆费尔德数和COF。使用由此获得的索默费尔德数和COF值,可以轻松,可靠地研究使用特定材料在特定条件下进行CMP抛光的润滑机理。本发明的方法通过使用能够同时测量剪切力和法向力并给出COF值的CMP抛光工具来完成,同时使操作员能够改变CMP晶片上的压力和相对速度以及CMP抛光实时填充。使用所述CMP工具,压力和相对速度可以根据操作员的需要单独地或一起改变期望的时间长度,从而在一个CMP过程中可以在相同的过程条件下进行多次测量。

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