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Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers

机译:磁阻元件,包括耦合到一对屏蔽层的一对铁磁层

摘要

A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.
机译:磁阻元件包括一对屏蔽部分,以及设置在该一对屏蔽部分之间的MR堆叠和偏置磁场施加层。屏蔽部分分别包括单个磁畴部分。 MR堆叠包括磁性耦合到一对单磁畴部分的一对铁磁层,以及设置在一对铁磁层之间的隔离层。 MR堆叠具有前端面,后端面和两个侧面。磁阻元件还包括两个磁通引导层,其布置在一对单磁畴部分之间并且分别与MR堆叠的两个侧表面相邻。两个磁通引导层的每一个具有前端面和后端面。偏置磁场施加层具有面向MR堆的后端面的前端面和两个磁通引导层的各自的后端面。

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