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Passively Q-switched microlaser with controllable peak power density

机译:具有可控峰值功率密度的被动调Q微激光器

摘要

Geometrical design of laser microchips is disclosed that allows variation of the optical path length in the different media by simple displacement of the microchip, the movement having a non-zero projection orthogonal to the pump beam. The concept can be implemented to vary optical loss in the lasing cavity, the absorbed pump power, or the optical length of the cavity. Passively Q-switched microchip laser output performance can thus be controlled by simple transverse displacement of the microchip relative to the pump beam. The above microlaser can be combined with voltage-controlled variable-focus output optics in order to control the peak power density of the laser pulses.
机译:公开了激光微芯片的几何设计,其允许通过微芯片的简单位移来改变不同介质中的光程长度,该运动具有正交于泵浦光束的非零投影。可以实施该概念以改变激光腔中的光学损耗,吸收的泵浦功率或腔的光学长度。因此,可以通过微芯片相对于泵浦光束的简单横向位移来控制无源Q开关微芯片激光器的输出性能。为了控制激光脉冲的峰值功率密度,可以将上述微激光器与电压控制的可变焦距输出光学器件结合使用。

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