A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.
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机译:Bi 4 Sub> Ti 3 Sub> O 12 Sub>纳米板,由Bi 4 Sub> Ti 3 div>组成的阵列提供了Sub> O 12 Sub>纳米板及其制备方法和应用。使用气相生长法,将VO x Sub>的助熔剂层沉积在面对SrTiO 3 Sub>(001)的基底上,然后沉积Bi 4 Sub> Ti 3 Sub> O 12 Sub>沉积在助焊剂层上。形成Bi 4 Sub> Ti 3 Sub> O 12 Sub>单晶纳米板,直立在助熔剂层上,呈矩形固体形式,其独立的三个侧面分别在与单晶衬底的特定晶体学方向一致的方向上晶体取向。通过自下而上的方法生长的作为纳米结构的纳米板基本上是固定的,并且紧密地排列而不彼此接触,并且可应用于低成本的铁电存储器等。
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