首页> 外国专利> OBTAINING SILICON INTERACTION OF SILICON OXIDE AND SILICON CARBIDE WITH THE NECESSITY IN PRESENTING A SECOND CARBON SOURCE

OBTAINING SILICON INTERACTION OF SILICON OXIDE AND SILICON CARBIDE WITH THE NECESSITY IN PRESENTING A SECOND CARBON SOURCE

机译:获得氧化硅和碳化硅的硅相互作用,并提供第二个碳源的必要性

摘要

The application describes a method for producing silicon by chemical conversion of silicon oxide at an elevated temperature with the addition of silicon carbide and, if necessary, a second carbon source to the reaction mixture. The application also describes a composition that can be used in the implementation of the method according to the invention. The basic idea of the invention is to use silicon carbide as a reaction initiator and / or reaction accelerator in the production of silicon or, alternatively, in approximately equimolar amounts for the production of silicon.
机译:该申请描述了一种通过在升高的温度下化学转化氧化硅并向反应混合物中添加碳化硅和第二碳源的方法生产硅的方法。本申请还描述了可用于实施根据本发明的方法的组合物。本发明的基本思想是在生产硅时使用碳化硅作为反应引发剂和/或反应促进剂,或者在生产硅时使用约等摩尔的量。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号