THERMOELECTRIC FIGURE OF MERIT ENHANCEMENT BY MODIFICATION OF THE ELECTRONIC DENSITY OF STATES

摘要

at least one Group Ha element, at least one Group lib element, at least one Group IHa element, at least one Group IHb element, at least one lanthanide element, and chromium. The at least one Group IV element is on a first sublattice of sites and the at least one Group VI element is on a second sublattice of sites, and the at least one Group IV element includes at least 95% of the first sublattice sites. The compound has a peak thermoelectric figure of merit ZT value greater than 0.7 at temperatures greater than 500K. Also claimed are a thermoelectric device comprising such material and the use thereof.