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Process for the production of superconducting monocrystals of iron chalcogenides of general formula FeTe0.5Se0.5

机译:通式为FeTe0.5Se0.5的硫属元素铁的超导单晶的生产方法

摘要

The invention relates to the technology of superconducting materials, in particular, to the production of monocrystals by the method of crystallization from melts.The process for the production of superconducting monocrystals of iron chalcogenides of general formula FeTe0.5Se0.5 consists in that preliminarily the initial materials selenium and tellurium are purified by zone melting, and iron pellets are subjected to mechanical cleaning, and then is performed the loading of initial materials into an evacuated vial, melting of the mixture by heating, exposure of the molten mixture at a temperature exceeding the component most refractory phase melting temperature with subsequent cooling and quenching. At the same time, heating of mixture is carried out at a rate of 2…5°C up to 600°C, is exposed for 20…24 hours, then is performed the stepwise heating with the step of 50°C at a rate of 1°C/min and exposure between steps for 8…10 hours up to reaching the temperature of 1100°C , at which the melt is exposed for 60…72 hours, then it is cooled at a rate of 2…60°C/hour up to a temperature of 420°C, at which the material is homogenized for 70…100 hours, and then it is carried out the quenching by placing the vial in a liquid at a temperature not exceeding 0°C. To obtain monocrystals of larger dimensions the obtained monocrystals are additionally milled in oxygen-free medium containing no water vapors, are heated into an evacuated vial at a rate of 5°C/min up to a temperature of 1100°C, at which the melt is exposed for 60…72 hours, then it is cooled at a rate of 2…60°C/hour up to a temperature of 420°C, at which the material is homogenized for 70…100 hours, and then is quenched by placing the vial in a liquid with a temperature not exceeding 0°C.
机译:本发明涉及超导材料技术,特别是涉及一种由熔体结晶的方法制备单晶的方法。通式为FeTe0.5Se0.5的硫族铁化物的超导单晶的制备方法包括:初始材料硒和碲通过区域熔化进行纯化,然后对铁丸进行机械清洁,然后将初始材料装入抽空的小瓶中,通过加热使混合物熔化,将熔融混合物暴露于温度超过组件最难熔相的熔化温度,随后进行冷却和淬火。同时,将混合物以2…5°C的速率加热到600°C,暴露20…24小时,然后以50°C的速率逐步加热以1°C / min的速度加热,各步骤之间的暴露时间为8…10小时,直至达到1100°C的温度,在此温度下熔融物暴露60…72小时,然后以2…60°C的速度冷却/小时,直至420°C的温度,在此温度下将物料均质化70…100小时,然后将小瓶放在温度不超过0°C的液体中进行淬灭。为了获得更大尺寸的单晶,将获得的单晶另外在不含水蒸气的无氧介质中研磨,以5°C / min的速度加热到抽空的小瓶中,直至达到1100°C的温度。暴露60…72小时,然后以2…60°C /小时的速度冷却至420°C,在此温度下将材料均质70…100小时,然后通过放置淬火将小瓶放在温度不超过0°C的液体中。

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