SOLAR CELL USING P-I-N NANOWIRES

摘要

The present invention relates to a solar cell using p-i-n nanowires, which efficiently absorbs solar light of within a wide range of wavelengths without a loss of light and generates photovoltaic power, and which involves a simple process and has low process costs. The solar cell using p-i-n nanowires according to the present invention comprises a semiconductor layer and a photovoltaic layer. The photovoltaic layer includes a semiconductor structure constituted by a core-nanowire which extends upwardly from the semiconductor layer and which consists of an intrinsic semiconductor material, and a shell-nanowire which covers the outside of the core-nanowire and which consists of a semiconductor material. The semiconductor material which forms the semiconductor layer is an n-type and the semiconductor material which forms the cell-nanowire is a p-type. Alternatively, the semiconductor material which forms the semiconductor layer is a p-type and the semiconductor material which forms the cell-nanowire is an n-type.