首页> 外国专利> A PIEZORESISTIVE SENSOR AND A METHOD OF CONTROLLING GIANT PIEZORESISTIVE COEFFICIENT OF AT LEAST ONE PIEZORESISTIVE ELEMENT

A PIEZORESISTIVE SENSOR AND A METHOD OF CONTROLLING GIANT PIEZORESISTIVE COEFFICIENT OF AT LEAST ONE PIEZORESISTIVE ELEMENT

机译:磁阻传感器和控制至少一个磁阻元件的巨磁阻系数的方法

摘要

In an embodiment, a method of controlling giant piezoresistive coefficient of at least one piezoresistive element may be provided. The method may include providing an electric field to the at least one piezoresistive element to thereby create a depletion region in the at least one piezoresistive element; applying a stress onto the at least one piezoresistive element to modulate concentration and mobility of charge carriers along the at least one piezoresistive element; and varying the electric field applied onto the at least one piezoresistive element to control the giant piezoresistive coefficient of the at least one piezoresistive element. The application of stress alone may not change the giant piezoresistive coefficient, it may only change the resistance by changing the concentration and mobility of charge carriers. A piezoresistive sensor may also be provided.
机译:在一个实施例中,可以提供一种控制至少一个压阻元件的超压阻系数的方法。该方法可以包括向至少一个压阻元件提供电场,从而在至少一个压阻元件中产生耗尽区;以及在该至少一个压阻元件中产生耗尽区。向所述至少一个压阻元件施加应力以调节沿着所述至少一个压阻元件的电荷载流子的浓度和迁移率;改变施加在至少一个压阻元件上的电场,以控制至少一个压阻元件的巨大压阻系数。单独施加应力可能不会改变巨大的压阻系数,而只能通过改变电荷载流子的浓度和迁移率来改变电阻。也可以提供压阻传感器。

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