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Graphene wafer, method for manufacturing the graphene wafer, method for releasing a graphene layer, and method for manufacturing a graphene device

机译:石墨烯晶片,制造石墨烯晶片的方法,用于释放石墨烯层的方法以及用于制造石墨烯器件的方法

摘要

A method is used for releasing a graphene layer from a substrate. A graphene layer (111) is first formed on a surface of a first substrate (101). A metal layer (120) is then formed on a surface of the graphene layer. A pulling force is then applied to the metal layer to detach the graphene layer from the first substrate. The released graphene layer is bonded by intermolecular force onto a surface of a second substrate (130) separate from the first substrate or onto a surface of a bonding layer formed on the surface of the second substrate. The metal layer is then removed, by for example, etching.
机译:一种用于从衬底释放石墨烯层的方法。首先在第一基板(101)的表面上形成石墨烯层(111)。然后在石墨烯层的表面上形成金属层(120)。然后将拉力施加到金属层以将石墨烯层与第一衬底分离。释放的石墨烯层通过分子间力结合到与第一基底分离的第二基底(130)的表面上或形成在第二基底的表面上的结合层的表面上。然后通过例如蚀刻去除金属层。

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