首页> 外国专利> METHOD FOR PRODUCING A WAFER-BASED, REAR-CONTACTED HETERO SOLAR CELLS AND HETERO SOLAR CELL PRODUCED BY THE METHOD

METHOD FOR PRODUCING A WAFER-BASED, REAR-CONTACTED HETERO SOLAR CELLS AND HETERO SOLAR CELL PRODUCED BY THE METHOD

机译:生产基于晶圆的,背面接触的异质太阳能电池的方法以及由该方法生产的异质太阳能电池

摘要

A method for the production of a wafer-based, back-contacted heterojunction solar cell includes providing at least one absorber wafer. Metallic contacts are deposited as at least one of point contacts and strip contacts in a predetermined distribution on a back side of the at least one absorber wafer. The contacts have steep flanks that are higher than a cumulative layer thickness of an emitter layer and an emitter contact layer and are sheathed with an insulating sheath. The emitter layer is deposited over an entire surface of the back side of the at least one absorber wafer. The emitter contact layer is deposited over an entire surface of the emitter layer so as to form an emitter contact system. At least one of the emitter layer and the emitter contact layer is selectively removed so as to expose the steep flanks of the contacts that are covered with the insulating sheath. An insulation layer is deposited over an entire surface of the emitter contact layer so as to provide a narrow contact web at an edge of the at least one absorber wafer. End areas of the steep flanks of the contacts that are covered by the insulation layer are exposed. At least one of an absorber contact layer and an absorber contact grid is deposited over an entire surface of the insulation layer and over the exposed end areas of the steep flanks so as to form the absorber contact system, so as to provide the heterojunction solar cell with the contact web and with the at least one of an absorber contact layer and an absorber contact grid of the absorber contact system.
机译:一种用于生产基于晶片的背接触异质结太阳能电池的方法,包括提供至少一个吸收体晶片。在至少一个吸收体晶片的背面上以预定分布沉积金属触点作为点触点和带状触点中的至少一个。接触件具有比发射极层和发射极接触层的累积层厚度高的陡峭侧面,并且被绝缘护套包裹。发射极层沉积在至少一个吸收体晶片的背面的整个表面上。发射极接触层沉积在发射极层的整个表面上,以形成发射极接触系统。选择性地去除发射极层和发射极接触层中的至少一者,以露出被绝缘护套覆盖的触点的陡峭侧面。绝缘层沉积在发射极接触层的整个表面上,以便在至少一个吸收体晶片的边缘处提供狭窄的接触网。接触层的陡峭侧面的端部区域被绝缘层覆盖。吸收体接触层和吸收体接触栅格中的至少一个沉积在绝缘层的整个表面上和陡峭侧面的暴露端部区域上,以形成吸收体接触系统,从而提供异质结太阳能电池。具有接触腹板和吸收器接触系统的吸收器接触层和吸收器接触栅中的至少一个。

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