首页> 外国专利> SEMICONDUCTOR LASER WITH LOW RELATIVE INTENSITY NOISE OF INDIVIDUAL LONGITUDINAL MODES AND OPTICAL TRANSMISSION SYSTEM INCORPORATING THE LASER

SEMICONDUCTOR LASER WITH LOW RELATIVE INTENSITY NOISE OF INDIVIDUAL LONGITUDINAL MODES AND OPTICAL TRANSMISSION SYSTEM INCORPORATING THE LASER

机译:单个纵向模式的低相对强度噪声的半导体激光和掺入激光的光传输系统

摘要

A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.
机译:一种半导体激光器,包括电隔离的有源部分和至少一个降噪部分,并在量子点阵列的基态跃迁上起作用,该量子点阵列具有大于10 nm的非均匀展宽。激光器优选发射多于10个的光学模式,使得在0.001GHz至10GHz的范围内,每个光学模式的总相对强度噪声小于0.2%。光谱功率密度优选高于2mW / nm。还公开了一种光学传输系统和一种操作量子点激光器的方法,该量子点激光器具有每个光学模式的较低的相对强度噪声。

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