首页> 外国专利> REGENERATING ARCH CHAMBER FOR AN ION IMPLANTING APPARATUS AND A METHOD FOR REGENERATING AN ARCH CHAMBER, CAPABLE OF FORMING A REGENERATING INNER-WALL ON THE INNER-WALL OF THE ARC CHAMBER

REGENERATING ARCH CHAMBER FOR AN ION IMPLANTING APPARATUS AND A METHOD FOR REGENERATING AN ARCH CHAMBER, CAPABLE OF FORMING A REGENERATING INNER-WALL ON THE INNER-WALL OF THE ARC CHAMBER

机译:用于离子注入装置的再生拱形腔和用于再生拱形腔的方法,能够在弧形腔的内壁上形成再生内壁

摘要

PURPOSE: A regenerating arch chamber for an ion implanting apparatus and a method for regenerating an arch chamber are provided to simplify a regenerating process using replaceable inner-wall part.;CONSTITUTION: A bottom part(111) and a sidewall part(112) are integrated to from an arc chamber. The inner-wall part of the arc chamber is damaged after a regenerating process, and the damaged inner-wall is cut. A regenerating inner-wall(115) is formed on the inner-wall of the arc chamber. A regenerating bottom(116) is formed on the bottom of the arc chamber. A metal coating layer(119) is formed on the regenerating inner-wall.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于离子注入设备的再生拱室和一种用于再生拱室的方法,以简化使用可更换内壁部分的再生过程。组成:底部(111)和侧壁部分(112)集成到电弧室。电弧室的内壁部分在再生过程之后被损坏,并且损坏的内壁被切割。在电弧室的内壁上形成有再生内壁(115)。在电弧室的底部上形成有再生底部(116)。在再生内壁上形成金属涂层(119)。;COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100121924A

    专利类型

  • 公开/公告日2010-11-19

    原文格式PDF

  • 申请/专利权人 J.C INOTEC;

    申请/专利号KR20090040857

  • 发明设计人 CHOI HWAN HYUK;JANG JIN HYEONG;

    申请日2009-05-11

  • 分类号H01J37/30;H01J37/317;H01L21/265;

  • 国家 KR

  • 入库时间 2022-08-21 17:53:20

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