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PHOTOMASK PATTERN FORMATION METHOD USING THE BACK SIDE EXPOSURE CONTROLLED THE GENERATION OF OVER DOSE AND UNDER DOSE
PHOTOMASK PATTERN FORMATION METHOD USING THE BACK SIDE EXPOSURE CONTROLLED THE GENERATION OF OVER DOSE AND UNDER DOSE
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机译:利用背面曝光控制剂量过大和剂量下生成的光掩模图形形成方法
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摘要
PURPOSE: The pattern having the profile which wants in each gin edge portion by the photomask pattern formation method using the back side exposure supplementing the insufficient exposure dose at the edge portion or offsetting the excessive exposure dose is formed.;CONSTITUTION: In the light projecting board(100), the optical block pattern(120) is arranged in the front side. The light is examined to the rear side in which the back side exposure is the front side and opposite of the light projecting board. The photoresist film(130) uses the back side exposure formed into the negative photoresist film.;COPYRIGHT KIPO 2011
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