首页> 外国专利> PHOTOMASK PATTERN FORMATION METHOD USING THE BACK SIDE EXPOSURE CONTROLLED THE GENERATION OF OVER DOSE AND UNDER DOSE

PHOTOMASK PATTERN FORMATION METHOD USING THE BACK SIDE EXPOSURE CONTROLLED THE GENERATION OF OVER DOSE AND UNDER DOSE

机译:利用背面曝光控制剂量过大和剂量下生成的光掩模图形形成方法

摘要

PURPOSE: The pattern having the profile which wants in each gin edge portion by the photomask pattern formation method using the back side exposure supplementing the insufficient exposure dose at the edge portion or offsetting the excessive exposure dose is formed.;CONSTITUTION: In the light projecting board(100), the optical block pattern(120) is arranged in the front side. The light is examined to the rear side in which the back side exposure is the front side and opposite of the light projecting board. The photoresist film(130) uses the back side exposure formed into the negative photoresist film.;COPYRIGHT KIPO 2011
机译:目的:通过光掩膜图形形成方法,利用背面曝光补充边缘部分不足的曝光剂量或抵消过量的曝光剂量,在每个杜松子酒边缘部分形成具有所需轮廓的图案;组成:在投光时在基板(100)上,光学块图案(120)布置在前侧。将光检查到背面,其中背面曝光是投光板的正面并且与之相反。光致抗蚀剂膜(130)使用形成在负性光致抗蚀剂膜中的背面曝光。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100122336A

    专利类型

  • 公开/公告日2010-11-22

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090041329

  • 发明设计人 JO SANG JIN;

    申请日2009-05-12

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:53:15

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