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MID-VOLTAGE SEMICONDUCTOR ELEMENT ARRAY, WHICH IS USED FOR A MID-VOLTAGE DIGITAL-TO-ANALOG CONVERTER SWITCH CIRCUIT

机译:中间电压数字-模拟转换器开关电路用的中间电压半导体元件阵列

摘要

PURPOSE: A mid-voltage(MV) semiconductor element array is provided to reduce the width of gates and the distances of elements in order to minimize the size of a chip by obtaining a switch circuit using the MV semiconductor element array.;CONSTITUTION: A plurality of element isolation regions(110) is formed on a semiconductor substrate(100). A gate(130) is formed on the active region which is between the element isolation regions. Spacers(150) are formed at both sides of the gate. A source region(122) and a drain region are formed on the active region which is at both sides of the spacers. An insulating layer(160) is formed on the entire surface of the semiconductor substrate.;COPYRIGHT KIPO 2011
机译:目的:提供一种中压(MV)半导体元件阵列,以减少栅极的宽度和元件的距离,从而通过使用MV半导体元件阵列获得开关电路来最小化芯片的尺寸。在半导体衬底(100)上形成多个元件隔离区域(110)。在元件隔离区域之间的有源区域上形成栅极(130)。间隔件(150)形成在栅极的两侧。在隔离物两侧的有源区上形成源极区(122)和漏极区。在半导体衬底的整个表面上形成绝缘层(160)。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100137675A

    专利类型

  • 公开/公告日2010-12-31

    原文格式PDF

  • 申请/专利权人 DONGBU HITEK CO. LTD.;

    申请/专利号KR20090055839

  • 发明设计人 LEE MUN YOUNG;

    申请日2009-06-23

  • 分类号H01L21/77;H01L21/335;

  • 国家 KR

  • 入库时间 2022-08-21 17:53:03

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