THIN FILM PLATING METHOD FOR SILICON DIOXIDE EVAPORATION, WHICH REDUCES THE PRODUCTION OF PARTICLES DUE TO REACTIVITY BY-PRODUCTS

摘要

PURPOSE: A thin film plating method for silicon dioxide evaporation, which reduces the production of particles due to reactivity by-products, is provided to perform evaporation in the ultralow temperature near the room temperature and to manufacture a thin film without the thermal bond of a lower plate.;CONSTITUTION: A thin film plating method for silicon dioxide evaporation comprises next steps. A substrate is inserted in a reaction chamber(10). A silicon compound is supplied inside the reaction chamber in order to form an atomic layer on the top of a substrate. Catalyst is supplied. The reaction gas is supplied inside the reaction chamber and reacts with the atomic layer.;COPYRIGHT KIPO 2011