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METHOD FOR ASHING OF PHOTO RESIST, METHOD FOR MANUFACTURING ZINC OXIDE TCO THIN FILM INCLUDING THE SAME AND ZINC OXIDE TCO THIN FILM
METHOD FOR ASHING OF PHOTO RESIST, METHOD FOR MANUFACTURING ZINC OXIDE TCO THIN FILM INCLUDING THE SAME AND ZINC OXIDE TCO THIN FILM
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机译:光刻胶的灰化方法,包括相同的氧化锌TCO薄膜和氧化锌TCO薄膜的制造方法
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摘要
PURPOSE: A method for removing a photoresist, a method for manufacturing a zinc oxide TCO thin film including the same, and the zinc oxide TCO thin film are provided to improve efficiency by reducing resistivity of the zinc oxide thin film. CONSTITUTION: A photoresist is firstly removed by spraying organic solvents on the photoresist. The photoresist is secondly removed by etching the photoresist with a CDPR(Chemical Dry Photoresist remover). The organic solvent is selected from the group consisting of the isopropanol, ethyleneglycol monobutyl ether, diethylene glycol monobuthyl ether, triethelen glycol mono butyl ether, tetrahydro furfurly alcohol, N-methypyrrolidone, dimethyl sulfuroxide, methyl-beta methoxypropionate or the mixture thereof.
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