首页> 外国专利> METHOD FOR ASHING OF PHOTO RESIST, METHOD FOR MANUFACTURING ZINC OXIDE TCO THIN FILM INCLUDING THE SAME AND ZINC OXIDE TCO THIN FILM

METHOD FOR ASHING OF PHOTO RESIST, METHOD FOR MANUFACTURING ZINC OXIDE TCO THIN FILM INCLUDING THE SAME AND ZINC OXIDE TCO THIN FILM

机译:光刻胶的灰化方法,包括相同的氧化锌TCO薄膜和氧化锌TCO薄膜的制造方法

摘要

PURPOSE: A method for removing a photoresist, a method for manufacturing a zinc oxide TCO thin film including the same, and the zinc oxide TCO thin film are provided to improve efficiency by reducing resistivity of the zinc oxide thin film. CONSTITUTION: A photoresist is firstly removed by spraying organic solvents on the photoresist. The photoresist is secondly removed by etching the photoresist with a CDPR(Chemical Dry Photoresist remover). The organic solvent is selected from the group consisting of the isopropanol, ethyleneglycol monobutyl ether, diethylene glycol monobuthyl ether, triethelen glycol mono butyl ether, tetrahydro furfurly alcohol, N-methypyrrolidone, dimethyl sulfuroxide, methyl-beta methoxypropionate or the mixture thereof.
机译:目的:提供一种用于去除光致抗蚀剂的方法,一种用于制造包括该光致抗蚀剂的氧化锌TCO薄膜的方法以及氧化锌TCO薄膜以通过降低氧化锌薄膜的电阻率来提高效率。组成:首先通过在光刻胶上喷涂有机溶剂来去除光刻胶。其次,通过用CDPR(化学干光致抗蚀剂去除剂)蚀刻光致抗蚀剂来去除光致抗蚀剂。有机溶剂选自异丙醇,乙二醇单丁醚,二甘醇单丁醚,三乙烯二醇单丁醚,四氢糠醇,N-甲基吡咯烷酮,二甲基亚砜,甲基-β-甲氧基丙酸酯或它们的混合物。

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