NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF CAPABLE OF EASILY FORMING MINUTE FILLERS OF A NANO SIZE ON A LIGHT EMITTING SURFACE OF THE UPPER SIDE OF AN ACTIVE LAYER

摘要

PURPOSE: A nitride semiconductor device and a manufacturing method thereof are provided to improve light extraction efficiency by forming a minute uneven surface on a light emitting surface with a mask pattern using a metal thin film.;CONSTITUTION: A semiconductor layer(10) including an active layer is prepared. A metal layer(20) is formed on the surface of the semiconductor layer to which light from the active layer is emitted. The surface of the metal layer becomes uneven by thermally processing the metal layer. A plurality of protrusions is formed by etching the surface of the semiconductor layer with a mask including a metal layer with a non-uniform surface. The remaining metal layer is removed and an electrode is formed on the semiconductor layer.;COPYRIGHT KIPO 2012