THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND CU-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER

摘要

This is a Cu alloy sputtering target , in atomic %,, Al: 1 ~ 10%, Ca: 0.1 ~ containing 2% , and containing Cu and inevitable impurities of less than 1% as the balance . A thin film transistor , the gate electrode layer via an adhesive layer bonded to the surface of the glass substrate , a gate insulating layer , Si semiconductor layer , n-type Si semiconductor layer , a barrier layer , a wiring layer made of a cross- separated source electrode and a drain electrode layer , a passivation layer , and having a transparent electrode layer , the barrier layer , is sputtering deposition in an oxidizing atmosphere by using the Cu alloy sputtering target . ;