首页> 外国专利> METHOD FOR FABRICATING MULTIPLE-SCALE SURFACE AND SOLID SUBSTRATE WITH THE MULTIPLE-SCALE SURFACE BY THE SAME METHOD

METHOD FOR FABRICATING MULTIPLE-SCALE SURFACE AND SOLID SUBSTRATE WITH THE MULTIPLE-SCALE SURFACE BY THE SAME METHOD

机译:用同一方法制造具有多尺度表面和固体的多尺度表面的方法

摘要

Provided are a multi-scale surface processing method in which a micrometer-scale structure and a nanometer-scale structure are mixed, and a solid substrate having a multi-scale surface produced by the method. The multi-scale surface processing method according to the present invention comprises the steps of preparing a silicon wafer, forming a sacrificial layer having a micrometer size on the silicon wafer, and separating the silicon wafer surface into a sacrificial layer forming region and other exposed regions; After the sacrificial layer is removed, the depth-reactive ion etching in which the protective film process and the etching process are periodically repeated is performed to form a micrometer scale structure in the sacrificial layer forming region, and at the same time, the nanometers are formed in the sacrificial layer forming region and the entire exposed region. Forming nanograss on a scale.
机译:本发明提供将微米级结构和纳米级结构混合的多尺度表面处理方法,以及通过该方法制造的具有多尺度表面的固体基板。根据本发明的多尺度表面处理方法包括以下步骤:制备硅晶片;在硅晶片上形成具有微米尺寸的牺牲层;以及将硅晶片表面分离成牺牲层形成区域和其他暴露区域。 ;在去除牺牲层之后,进行深度反应离子刻蚀,其中周期性地重复保护膜工艺和刻蚀工艺,以在牺牲层形成区域中形成微米级结构,并且同时纳米被去除。形成在牺牲层形成区域和整个暴露区域中。形成规模的纳米草。

著录项

  • 公开/公告号KR20110105541A

    专利类型

  • 公开/公告日2011-09-27

    原文格式PDF

  • 申请/专利权人 POSTECH ACADEMY-INDUSTRY FOUNDATION;

    申请/专利号KR20100024737

  • 发明设计人 CHO SEONG JIN;LIM GEUN BAE;

    申请日2010-03-19

  • 分类号H01L21/027;H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:04

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号