首页> 外国专利> NANO TRANSDUCER FOR MORE STRONGLY GENERATING A MAGNETIC FIELD WITH A LIMITED CURRENT AMOUNT AND A NANO DEVICE ASSEMBLY USING THE SAME

NANO TRANSDUCER FOR MORE STRONGLY GENERATING A MAGNETIC FIELD WITH A LIMITED CURRENT AMOUNT AND A NANO DEVICE ASSEMBLY USING THE SAME

机译:纳米传感器,用于更强地产生具有有限电流量和组装有相同纳米器件的磁场

摘要

PURPOSE: A nano transducer and a nano device assembly using the same are provided to detect higher induced voltage from a neighboring weak magnetic field.;CONSTITUTION: A nano transducer(2) comprises a substrate(250), a first insulation layer(251), a first terminal(21), a winding part(23), a second insulation layer(252), a second terminal(22), and a contact part(D). The first insulation layer is formed on the substrate. The first terminal is formed on the first insulation layer. The winding part interlinks one end, which is wound from the first terminal to the central part of the substrate, to the first terminal on the first insulation layer. The second insulation layer is formed on the first insulation layer, and the first terminal, and the winding part. The second terminal is formed on the second insulation layer. The contact part drills the second insulation layer and interlinks the other end of the winding part with the second terminal.;COPYRIGHT KIPO 2012
机译:目的:提供一种纳米换能器和使用该纳米换能器的组件以检测来自邻近弱磁场的较高感应电压。组成:纳米换能器(2)包括基板(250),第一绝缘层(251)第一端子(21),绕组部分(23),第二绝缘层(252),第二端子(22)和接触部分(D)。第一绝缘层形成在基板上。第一端子形成在第一绝缘层上。缠绕部分将从第一端子缠绕到基板的中心部分的一端与第一绝缘层上的第一端子互连。第二绝缘层形成在第一绝缘层,第一端子和绕组部分上。第二端子形成在第二绝缘层上。接触部分在第二绝缘层上钻孔,并使绕组部分的另一端与第二端子互连。; COPYRIGHT KIPO 2012

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